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        USERS' GUIDE

        HD-000174-UG-9- HB-DS-eval-board

         

        HEY-HBDS-G-12A1-A

        HALF BRIDGE DRIVER SWITCH BOARD with Hey1011

         

        Content

        Description - Quick Start Guide - Gate pull up and pull down resistors - PCB Layout - Schematic - Bill of materials - Double Pulse Test - Test results - Ordering Information - Disclaimer -

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        Description

        The Heyday Integrated Circuits Half Bridge Driver-Switch HEY-HBDS-G-12A1-A board is a demonstration board containing two HEY1011-L12A GaN FET drivers and two GaN FETs configured in a half bridge configuration.

        The datasheet for the HEY1011 in this board can be found in our resources

        HD-000174-UG-8-HEY-HBDS-G-12A1-A-1

        Figure 1: HEY-HBDS-G-12A1-A Evaluation Board

         

        The HEY-HBDS-G-12A1-A can be used to perform double pulse tests, see section Double Pulse Test below, or to interface the half bridge to an existing LC power section as shown below.

        The isolated HEY1011-L12A driver does not require secondary side power nor bootstrap components. Gate drive power is supplied to secondary side from the primary side supply voltage VDRV. The amplitude of the gate drive can be varied by varying VDRV between 7V and 15V.

        The Heyday Integrated Circuits Half Bridge Driver-Switch is available in two versions:

        • HEY-HBDS-G-12A1-A Top Cooled: Uses GaN Systems GS66516T devices mounted on the bottom side of the PCB where a heat sink, if used, can be mounted direct onto the transistors

        • HEY-HBDS-G-12B1-A Bottom Cooled: Uses GaN Systems GS66508B devices mounted on the top side of the PCB where a heat sink, if used, can be mounted on the bottom side of the PCB and heat is transferred through the PCB.

         

         

        hazard

         

        DANGER

        DO NOT TOUCH THE BOARD WHEN IT IS ENERGIZED AND ALLOW ALL COMPONENTS TO DISCHARGE COMPLETELY PRIOR HANDLING THE BOARD.

         HIGH VOLTAGE CAN BE EXPOSED ON THE BOARD WHEN IT IS CONNECTED TO POWER SOURCE. EVEN BRIEF CONTACT DURING OPERATION MAY RESULT IN SEVERE INJURY OR DEATH.

        Please ensure that appropriate safety procedures are followed. This evaluation kit is designed for engineering evaluation in a controlled lab environment and should be handled by qualified personnel ONLY. Never leave the board operating unattended.

        warning

         

        WARNING

        Some components can be hot during and after operation. There is NO built-in electrical or thermal protection on this evaluation kit. The operating voltage, current, and component temperature should be monitored closely during operation to prevent device damage.

        ESD

         

        CAUTION

        This product contains parts that are susceptible to damage by electrostatic discharge (ESD). Always follow ESD prevention procedures when handling the product. 

         

        Quick Start Guide

         

        Figure 2: HEY-HBDS-G-12A1-A Quick Start

         

        Figure 2: HEY-HBDS-G-12A1-A Quick Start

        1. Apply VDRV = 7.5V

        2. Apply input gate signals, with adequate dead time, to the IN_L and IN_H inputs.

        3. Convenient test points a located on the test board as shown above. A suitable differential oscilloscope should be used to monitor the high side gate signal from VGH to VSW.

        Gate pull up and pull down resistors

        The HEY1011-L12A gate driver has independent outputs for the gate pull up and gate pull down allowing control of the on and off rise and fall times.

        The default values for these resistors are:

        • OUTPU: R1 and R5 = 10 Ohms

        • OUTPD: R3 and R7 = 1 Ohms

        These values can be modified to suit your own application.

         

        PCB Layout

        HEY-HBDS-G-12A-A

         

        Figure 3: HEY-HBDS-G-12A1-A Silkscreen and component placement

        Figure 3: HEY-HBDS-G-12A1-A Silkscreen and component placement

         

        Figure 4: HEY-HBDS-G-12A1-A Top Side Copper (L) and Layer 2 Copper (R)  Figure 4: HEY-HBDS-G-12A1-A Top Side Copper (L) and Layer 2 Copper (R)  

         

        Figure 4: HEY-HBDS-G-12A1-A Top Side Copper (L) and Layer 2 Copper (R)

         

        Figure 5: HEY-HBDS-G-12A1-A Layer 2 Copper(L) and Bottom Side Copper (R) Figure 5: HEY-HBDS-G-12A1-A Layer 2 Copper(L) and Bottom Side Copper (R)

         

        Figure 5: HEY-HBDS-G-12A1-A Layer 2 Copper(L) and Bottom Side Copper (R)

         

        HEY-HBDS-G-12B1-A

         

        Figure 6: HEY-HBDS-G-12B1-A Silkscreen and component placement

        Figure 6: HEY-HBDS-G-12B1-A Silkscreen and component placement

         

         

        Figure 7: HEY-HBDS-G-12B1-A Top Side Copper (L) and Layer 2 Copper (R)  Figure 7: HEY-HBDS-G-12B1-A Top Side Copper (L) and Layer 2 Copper (R)

         

        Figure 7: HEY-HBDS-G-12B1-A Top Side Copper (L) and Layer 2 Copper (R)

         

        Figure 8: HEY-HBDS-G-12B1-A Layer 2 Copper(L) and Bottom Side Copper (R)Figure 8: HEY-HBDS-G-12B1-A Layer 2 Copper(L) and Bottom Side Copper (R)

         

        Figure 8: HEY-HBDS-G-12B1-A Layer 2 Copper(L) and Bottom Side Copper (R)

         

         

        Schematic

         

        Figure 9: HEY-HBDS-G-12B1-A Schematic

        Figure 9: HEY-HBDS-G-12B1-A Schematic

         

         

        Bill of materials

         

        Item

        Ref Name

        Description

        Value

        Comment

        1

        C1,C2,C3,C4

        CAP 100nF 630V X7R C1210

        100nF

         

        2

        C5,C14

        22nF,16V, CAP, CER, X7R, S0402

        22nF

         

        3

        C6,C13

        CAP, CER,1uF,25V,X5R, S0402

        1uF

         

        4

        CONN2

        CONN, HDR, 4WAY, 2P54

        4WAY, 2P54, VERT

         

        5

        HSINK1

        HSINK, 33x33x33mm, Fin, 2.1C/W

        HSINK FIN 33x33x33mm

        Suggested heat sink for bottom cooled module

        6

        IC1,IC2

        HEY1011 7.66 X10 MODULE, V03

        HEY1011L12-PS

         

        7

        Q1,Q2

        NGAN GS66516T 650V 60A NGAN GS66508B 650V 30A

        GS66516T GS66508B

        GS66516T used on HEY-HBDS-G-12A-A GS66508B used on HEY-HBDS-G-12B1-A

        8

        R1,R5

        RES, SMD, 10R, 0.063W, 1%, S0402

        10R

         

        9

        R10,R12

        RES, SMD, 0R0, 0.063W, 1%, S0402

        0R

         

        10

        R2,R6

        RES, SMD, 100K, 0.063W, 1%, S0402

        100K

         

        11

        R3,R7

        RES, SMD, 1R0, 0.063W, 1%, S0402

        1R

         

        12

        R4,R8

        RES, SMD, 1K6, 0.063W, 1%, S0402

        1.6K

         

        13

        R9,R11

        RES, SMD, NA, 1%, S0402

        NA

         

        Table 1: Bill of materials

         

        Double Pulse Test

        Theory

        The double pulse test is used to evaluate the switching characteristics of a power switch under hard switching but in a safe manner.

        For a low side switch the set up is as shown below:

        Figure 10: Double Pulse Test

        Figure 10: Double Pulse Test

         

        The low side switch is driven with two pulses as shown below. The high side switch can be held off or driven with the inverse of the low side gate switch (with adequate dead time).

        HD-000174-UG-9-Hey1011 Half Bridge DS Users Guide-10

        Figure 11: Double Pulse Test Waveforms

         

        An inductor is placed in parallel with the high side switch. The goal of this inductor is to establish the test level current in the low side switch at the end of the first on pulse (1).

        The falling edge of pulse 1 is used to examine the hard turn off characteristics of the switch. The rising edge of pulse 3 is used to examine the hard turn on characteristics of the switch. By only applying these two pulses, the switches are only on for a very short time and will not over heat.

         

        Test Results

         

         

        COMPONENTS

        Drivers:

        Heyday HEY1011-L12A

        Inductor:

        Wurth 74437529203471 (470uH 5.5A)

        RPU:

        10W

        RPD:

        0W

        CSEC:

        22nF X7R

        Mode:

        2

         

         

        TEST SET UP

        DC Bus Voltage:

        100V

        Load Current:

        3.6A

        TON_1:

        16μs

        TOFF_1:

        1μs

        TON_2:

        1μs

         

         

        Double Pulse Overview: 100V 3.8A

         

         

        CH2(Grn): Switch Node

        CH3(Blk): Inductor current (1A/V)

        CH4(Blu): Low side VGS

         

        Hard switch off: 100V 3.8A

         

         

        CH2(Grn): Switch Node

        CH3(Blk): Inductor current (1A/V)

        CH4(Blu): Low side VGS

         

        Hard switch on: 100V 3.8A

         

         

        CH2(Grn): Switch Node

        CH3(Blk): Inductor current (1A/V)

        CH4(Blu): Low side VGS

        Ordering information

        Please visit our online store

         

        Disclaimer

        Heyday Integrated Circuits (“Heyday”) provides all data in any resource and in any format such as, but not limited to datasheets, reference designs, application notes, web tools and safety information “as is” and with all faults, and disclaims any type of warranties, fitness for a particular purpose or non-infringement of 3rd party intellectual property rights. Any examples described herein are for illustrative purposes only and are intended to provide customers with the latest, accurate, and in-depth documentation regarding Heyday products and their potential applications. These resources are subject to change without notice. Heyday allows you to use these resources only for development of an application that uses the Heyday product(s) described in the resource. Other reproduction and display of these resources is prohibited. Heyday shall have no liability for the consequences of use of the information supplied herein.

         

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