MOS drivers


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      SiC drivers


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        Fully integrated isolated gate drivers

        High-speed gate driver & isolated supply all in one package, Say goodbye to bootstrap components,Unlock new performance & efficiency levels, Self-powered

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        Isolated supply and gate driver in just one LGA package (10 x 7.66 x 1.91 mm)

        Simplicity at last!


        logo APEC trans Industrial Session  

        "Self-Powered Isolated Drivers to Simplify Your Isolated Gate Drive System Design and Save cost, Using Power-Thru™ Technology" 

        In this Session, we introduce Heyday’s new Power-ThruTM technology to generate a simple isolated bias supply along with the isolated gate drive using a single integrated device. We briefly outline why isolated gate drivers are needed, show how the necessary isolated bias supply for the driver is conventionally generated, and talk about the significant challenges of these conventional methods. We will show examples of the system simplification and the benefits of Heyday technology, and show how the isolated driver with internal bias supply can be very easily deployed to drive any power switch in any topology, with some example boards and test results.

        Want to know more?

        Watch Industrial Session 19.2 at APEC 2021

        APEC 2021 virtual conference

        More details: see our blog post

        Or register directly here. Or look at the APEC schedule


         Heyday-logo-transparent 500x135 Webinar:

        "Deep dive into Heyday IC’s fully integrated Power-Thru isolated gate drivers"

        In this Session, we will introduce Heyday’s new Power-ThruTM technology to generate a simple isolated bias supply along with the isolated gate drive using a single integrated device and deep dive into it. 

        Register for our live webinar with our Sr Applications Engineers

        More info and/or Registration


        Gate drivers for MOS*, GaN and SiC*

        Heyday gate drivers are built on proven CMOS silicon technology and can drive MOSFETs as well as the new wide bandgap GaN and SiC FETs.

        • Drive any FET to new unparalleled performance levels.

        Our gate drivers feature our patented Power-Thru™ technology:

        • No more bootstrap components or isolated supplies required: the Heyday gate drivers do ALL the magic in ONE single integrated package

        The benefits of the Power-Thru™ technology are substantial. 

        * pre-series gate drivers for MOS and SiC to be released  in several months. Subscribe here to be updated on product releases

        Make you power module...




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        Area and Volume


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        BOM cost

        It's just awesome. 

        see the difference for yourself

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        We have already sold 1000s of gate drivers to the most innovative companies - improving their competitive advantage.

        We can help you grow your business



        Gate drivers for any application

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        Solar Inverters

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        Motor drives

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        Data Centres

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        Power tools


        Go to GaN gate drivers



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        Innovation based on experience

        The Heyday team has leveraged many years of experience to develop a unique technology enabling high performance gate drivers.  In one single package and across one single internal isolation boundary both the gate drive signal and the drive power are transferred.  

        We have called it power-thru®.

        A single 2.6mm high LGA package now delivers isolated gate drive and energy at high speeds to your GaN and MOS FETs.  This enables improvements in efficiency, BOM count, module size, reliability and cost. Great news for all power module designers!

        Reliable by design


        In its product development processes Heyday uses:

        • Standard 180nm CMOS technology
        • Tier 1 dual-sourced Fabs
        • Industry leading packaging vendors
        • Rigorous development an qualification processes
        • Second-source strategies