MOS drivers


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      SiC drivers


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        Fully integrated isolated gate drivers

        High-speed gate driver & isolated supply all in one package, Say goodbye to bootstrap components,Unlock new performance & efficiency levels, Self-powered

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        Isolated supply and gate driver in just one LGA package (10 x 7.66 x 1.91 mm)

        Simplicity at last!


         Heyday-logo-transparent 500x135 Webinar

        with our Sr Applications Engineers


        "Deep dive into Heyday IC’s

        fully integrated Power-Thru isolated gate drivers"

        In this Session, we will introduce Heyday’s new Power-ThruTM technology to generate a simple isolated bias supply along with the isolated gate drive using a single integrated device and deep dive into it. 

        Watch the replay: 

        Watch the replay


        Gate drivers for MOS*, GaN and SiC*

        Heyday gate drivers are built on proven CMOS silicon technology and can drive MOSFETs as well as the new wide bandgap GaN and SiC FETs.

        • Drive any FET to new unparalleled performance levels.

        Our gate drivers feature our patented Power-Thru™ technology:

        • No more bootstrap components or isolated supplies required: the Heyday gate drivers do ALL the magic in ONE single integrated package

        The benefits of the Power-Thru™ technology are substantial. 

        * pre-series gate drivers for MOS and SiC to be released  in several months. Subscribe here to be updated on product releases

        Make you power module...




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        Area and Volume


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        BOM cost

        It's just awesome. 

        see the difference for yourself

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        We have already sold 1000s of gate drivers to the most innovative companies - improving their competitive advantage.

        We can help you grow your business



        Gate drivers for any application

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        Solar Inverters

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        Motor drives

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        Data Centres

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        Power tools


        Go to GaN gate drivers



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        Innovation based on experience

        The Heyday team has leveraged many years of experience to develop a unique technology enabling high performance gate drivers.  In one single package and across one single internal isolation boundary both the gate drive signal and the drive power are transferred.  

        We have called it power-thru®.

        A single 2.6mm high LGA package now delivers isolated gate drive and energy at high speeds to your GaN and MOS FETs.  This enables improvements in efficiency, BOM count, module size, reliability and cost. Great news for all power module designers!

        Reliable by design


        In its product development processes Heyday uses:

        • Standard 180nm CMOS technology
        • Tier 1 dual-sourced Fabs
        • Industry leading packaging vendors
        • Rigorous development an qualification processes
        • Second-source strategies