Innovation based on experience
The Heyday team has leveraged many years of experience to develop a unique technology enabling high performance gate drivers. In one single package and across one single internal isolation boundary both the gate drive signal and the drive power are transferred.
We have called it power-thru®.
A single 2.6mm high LGA package now delivers isolated gate drive and energy at high speeds to your GaN and MOS FETs. This enables improvements in efficiency, BOM count, module size, reliability and cost. Great news for all power module designers!